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  SPECIFICATION
ADVANCED NANOELECTRONICS (hb)2012
Author: ISMAIL
ISBN: 9781439856802
Year: 2012
Publisher: TAYLOR & FRANCIS BOOK LTD.
Category: ELECTRONICS
Format: Hard Cover
Language: English
Pages: 456
 ABOUT THE TITLE
While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model nanoscale transistors and to predict their characteristics even before they are fabricated. Advanced Nanoelectronics provides research information on advanced nanoelectronics concepts, with a focus on modeling and simulation. Featuring contributions by researchers actively engaged in nanoelectronics research, it develops and applies analytical formulations to investigate nanoscale devices.

The book begins by introducing the basic ideas related to quantum theory that are needed to better understand nanoscale structures found in nanoelectronics, including graphenes, carbon nanotubes, and quantum wells, dots, and wires. It goes on to highlight some of the key concepts required to understand nanotransistors. These concepts are then applied to the carbon nanotube field effect transistor (CNTFET).

Several chapters cover graphene, an unzipped form of CNT that is the recently discovered allotrope of carbon that has gained a tremendous amount of scientific and technological interest. The book discusses the development of the graphene nanoribbon field effect transistor (GNRFET) and its use as a possible replacement to overcome the CNT chirality challenge. It also examines silicon nanowire (SiNW) as a new candidate for achieving the downscaling of devices. The text describes the modeling and fabrication of SiNW, including a new top-down fabrication technique. Strained technology, which changes the properties of device materials rather than changing the device geometry, is also discussed.

The book ends with a look at the technical and economic challenges that face the commercialization of nanoelectronics and what universities, industries, and government can do to lower the barriers. A useful resource for professionals, researchers, and scientists, this work brings together state-of-the-art technical and scientific information on important topics in advanced nanoelectronics.

Authors:
Dr. Razali Ismail is currently a professor and head of the Computational Nanoelectronics Research Group at Universiti Teknologi Malaysia. He has worked for more than 20 years in the field of modeling and simulation of microelectronics devices and has published various articles on the subject. His current research interest is in the emerging area of nanoelectronics devices, focusing on the use of carbon-based materials and novel device structure.

Dr. Mohammad Taghi Ahmadi is a senior lecturer in the Faculty of Electrical Engineering at Universiti Teknologi Malaysia (UTM). He is active in research related to carbon-based devices and graphene-based transistor and sensor modeling. His main research interests are in nanoscale device modeling, simulation, and characterization. His research has resulted in a number of publications in high-impact journals, for which he has been several awards, including a UTM Chancellor Award (2010).

Dr. Sohail Anwar is an associate professor of engineering at the Altoona College of The Pennsylvania State University. He is also a professional associate of the Management Development Programs and Services at The Pennsylvania State University, University Park. Dr. Anwar is a senior member of the IEEE and a member of ASEE and PAS. He recently served on the IEEE Committee on Technology Accreditation Activities (CTAA).
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 TABLE OF CONTENTS
• Fundamentals of Quantum Nanoelectronics
• Jeffrey Frank Webb and Mohammad Taghi Ahmadi
• Carbon-Based Materials Concepts and Basic Physics
• Mohammad Taghi Ahmadi, Jeffrey Frank Webb, Razali Ismail, and Moones Rahmandoust
• Carbon Nanotube Field Effect Transistor Model
• Mohammad Taghi Ahmadi and Razali Ismail
• Carbon Nanotube Circuit Analysis and Simulation
• Desmond C.Y. Chek and Razali Ismail
• Graphene Nanoribbon Field Effect Transistors
• Noraliah Aziziah Md. Amin, Mohammad Taghi Ahmadi, and Razali Ismail
• Carrier Transport, Current–Voltage Characteristics of BGN
• Seyed Mahdi Mousavi, Meisam Rahmani, Hatef Sadeghi, Mohammad Taghi Ahmadi, and Razali Ismail
• Bilayer Graphene Nanoribbon Transport Model
• Hatef Sadeghi, Seyed Mahdi Mousavi, Meisam Rahmani, Mohammad Taghi Ahmadi, and Razali Ismail
• Trilayer Graphene Nanoribbon Field Effect Transistor Modeling
• Meisam Rahmani, Hatef Sadeghi, Seyed Mahdi Mousavi, Mohammad Taghi Ahmadi, and Razali Ismail
• Graphene Nanoribbon Transistor Model: Additional Concepts
• Mahdiar Ghadiry, Mahdieh Nadi, and Asrulnizam Abd Manaf
• Silicon Nanowire Field Effect Transistor Modeling
• Amir Hossein Fallahpour and Mohammad Taghi Ahmadi
• Silicon Nanowires/Nanoneedles: Advanced Fabrication Methods
• Habib Hamidinezhad and Yussof Wahab
• Top-down Fabrication of ZnO Nanowire FET
• Suhana Mohamed Sultan, Peter Ashburn, and Harold Chong
• Quantum Mechanical Effects in Nanometer Scale Strained Si/Si1-x Gex MOSFETs
• Kang Eng Siew and Razali Ismail
• Nanoelectronics Research and Commercialization in the United States
• Sohail Anwar
• Appendix
• Glossary
• Index
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